surface mount voidless- hermetically-sealed ultra fast re co very g la ss re c tifier s microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2007 1-15-2007 rev a www. microsemi . com scottsdale division 1N5802US thru 1n5806us 1N5802US ? 1n5806us description appearance this ?ultrafast recovery? surface mount rectif ier diode series is military qualified to mil- prf-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. these industry-recognized 2.5 am p rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal ?category i? metallurgical bond. they are also available in axial- leaded package configurations for thru-hole mounting (see separate data sheet for 1n5802 thru 1n5806). microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast devic e types in both through-hole and surface mount packages. package ?a? or d-5a important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? surface mount package series equivalent to the jedec registered 1n5802 to 1n5806 series ? voidless hermetically sealed glass package ? extremely robust construction ? triple-layer passivation ? internal ? category i? metallurgical bonds ? jan, jantx, jantxv, and jans available per mil-prf- 19500/477 ? axial-leaded equivalents available (see 1n5802 thru 1n5806) ? ultrafast recovery 2.5 amp rectifier series 50 to 150 v ? military and other high-reliability applications ? switching power supplies or other applications requiring extremely fast switching & low forward loss ? high forward surge current capability ? low thermal resistance ? controlled avalanche with peak reverse power capability ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? junction temperature: -65 o c to +175 o c ? storage temperature: -65 o c to +175 o c ? average rectified forward current (i o ): 2.5 a @ t ec = 75oc ? thermal resistance: 20 oc/w junction to end cap ? thermal impedance: 4.5 o c/w @ 10 ms heating time ? forward surge current: 35 amps @ 8.3 ms half-sine ? capacitance: 25 pf @ v r = 10 volts, f = 1 mhz ? solder temperature: 260oc for 10 s (maximum) ? case: hermetically sealed voidless hard glass with tungsten slugs ? terminals: end caps are copper with tin/lead (sn/pb) finish. note: previous inventory had solid silver end caps with tin/lead (sn/pb) finish. ? marking and polarity: cathode band only ? tape & reel option: standard per eia-481-b ? weight: 193 mg ? see package dimensions and recommended pad layout on last page electrical characteristics type working peak reverse voltage v rwm breakdown voltage (min.) @ 100 a v br average rectified current i o1 @ t ec =+75oc (note 1) average rectified current i o2 @ t a =+55oc (note 2) maximum forward voltage @ 1 a (8.3 ms pulse) v f reverse current (max) @ v rwm i r surge current (max) i fsm (note 3) reverse recovery time (max) (note 4) t rr volts volts amps amps volts a amps ns 25 o c 100 o c25 o c 100 o c 1N5802US 1n5803us 1n5804us 1n5805us 1n5806us 50 75 100 125 150 55 80 110 135 160 2.5 2.5 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 0.875 0.875 0.875 0.800 0.800 0.800 1 1 1 1 1 50 50 50 50 50 35 35 35 35 35 25 25 25 25 25 note 1: i o1 is rated at 2.5 a @ t ec = 75o. derate at 50 ma/oc for t ec above 125oc. note 2: i o2 is rated at 1.0 a @ t a = 55oc for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where t j(max) does not exceed 175oc. derate at 8.33 ma/oc for t a above 55oc. note 3: t a = 25 o c @ i o = 1.0 a and v rwm for ten 8.3 ms surges at 1 minute intervals note 4: i f = 0.5 a, i rm = 0.5 a, i r(rec) = .05 a
surface mount voidless- hermetically-sealed ultra fast re co very g la ss re c tifier s microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 2 copyright ? 2007 1-15-2007 rev a www. microsemi . com scottsdale division 1N5802US thru 1n5806us 1N5802US ? 1n5806us symbols & definitions symbol definition v br minimum breakdown voltage: the minimum volt age the device will exhibit at a specified current v rwm working peak reverse voltage: the maximum peak volt age that can be applied over the operating temperature range i o average rectified output current: ou tput current averaged over a full cy cle with a 50 hz or 60 hz sine-wave input and a 180 degree conduction angle v f maximum forward voltage: the maximum forward vo ltage the device will exhibi t at a specified current i r maximum leakage current: the maximum leakage current t hat will flow at the specif ied voltage and temperature c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage t rr reverse recovery time: the time interval between t he instant the current passes through zero when changing from the forward direction to the reverse direction an d a specified recovery decay point after a peak reverse current occurs. package dimensions and pad layout note: this package outline has also previously pad layout been identified as ?d-5a? inches mm a 0.246 6.25 b 0.067 1.70 c 0.105 2.67 note: if mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement. inches mm min max min max bd .097 .103 2.46 2.62 bl .185 .200 4.70 5.08 ect .019 .028 0.48 0.71 s .003 --- 0.08 ---
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